Far-Field Emission Patterns of Nanowire Light-Emitting DiodesMOTOHISA, Junichi; KOHASHI, Yoshinori; MAEDA, Satoshi et al.Nano letters (Print). 2014, Vol 14, Num 6, pp 3653-3660, issn 1530-6984, 8 p.Article

Lateral thickness modulation of InGaAs layers on GaAs in selective area metalorganic vapor phase epitaxyTERASAWA, Tomonori; NAKAJIMA, Fumito; MOTOHISA, Junichi et al.Journal of crystal growth. 2001, Vol 223, Num 4, pp 523-527, issn 0022-0248Article

Control of InAs Nanowire Growth Directions on SiTOMIOKA, Katsuhiro; MOTOHISA, Junichi; HARA, Shinjiroh et al.Nano letters (Print). 2008, Vol 8, Num 10, pp 3475-3480, issn 1530-6984, 6 p.Article

Zinc Blende and Wurtzite Crystal Phase Mixing and Transition in Indium Phosphide NanowiresIKEJIRI, Keitaro; KITAUCHI, Yusuke; TOMIOKA, Katsuhiro et al.Nano letters (Print). 2011, Vol 11, Num 10, pp 4314-4318, issn 1530-6984, 5 p.Article

GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on SiTOMIOKA, Katsuhiro; MOTOHISA, Junichi; HARA, Shinjiroh et al.Nano letters (Print). 2010, Vol 10, Num 5, pp 1639-1644, issn 1530-6984, 6 p.Article

Observation of Microcavity Modes and Waveguides in InP Nanowires Fabricated by Selective-Area Metalorganic Vapor-Phase EpitaxyYING DING; MOTOHISA, Junichi; BIN HUA et al.Nano letters (Print). 2007, Vol 7, Num 12, pp 3598-3602, issn 1530-6984, 5 p.Article

Growth of InGaAs nanowires by selective-area metalorganic vapor phase epitaxySATO, Takuya; MOTOHISA, Junichi; NOBORISAKA, Jinichiro et al.Journal of crystal growth. 2008, Vol 310, Num 7-9, pp 2359-2364, issn 0022-0248, 6 p.Article

Self-assembly and selective-area formation of ferromagnetic MnAs nanoclusters on lattice-mismatched semiconductor surfaces by MOVPEHARA, Shinjiroh; KAWAMURA, Daichi; IGUCHI, Hiroko et al.Journal of crystal growth. 2008, Vol 310, Num 7-9, pp 2390-2394, issn 0022-0248, 5 p.Article

Single GaAs/GaAsP Coaxial Core-Shell Nanowire LasersBIN HUA; MOTOHISA, Junichi; KOBAYASHI, Yasunori et al.Nano letters (Print). 2009, Vol 9, Num 1, pp 112-116, issn 1530-6984, 5 p.Article

Structural Transition in Indium Phosphide NanowiresKITAUCHI, Yusuke; KOBAYASHI, Yasunori; TOMIOKA, Katsuhiro et al.Nano letters (Print). 2010, Vol 10, Num 5, pp 1699-1703, issn 1530-6984, 5 p.Article

Proceedings of the 14th International Conference on Modulated Semiconductor Structures (MSS14)OHNO, Hideo; WOO, Jong-Chun; YOSHINO, Junji et al.Physica. E, low-dimentional systems and nanostructures. 2010, Vol 42, Num 10, issn 1386-9477, 406 p.Conference Proceedings

The initial stage of InGaAs growth by MOVPE on multiatomic-stepped GaAs structuresLEE, Sangyoru; AKABORI, Masashi; SHIRAHATA, Takahiro et al.Journal of crystal growth. 2001, Vol 231, Num 1-2, pp 75-81, issn 0022-0248Article

Self-assembled formation of ferromagnetic MnAs nanoclusters on GaInAs/InP (111) B layers by metal-organic vapor phase epitaxyHARA, Shinjiroh; MOTOHISA, Junichi; FUKUI, Takashi et al.Journal of crystal growth. 2007, Vol 298, pp 612-615, issn 0022-0248, 4 p.Conference Paper

Catalvst-free selective-area MOVPE of semiconductor nanowiresMOTOHISA, Junichi; FUKUI, Takashi.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 63700B.1-63700B.11, issn 0277-786X, isbn 0-8194-6468-6, 1VolConference Paper

Influence of growth temperature on growth of InGaAs nanowires in selective-area metal―organic vapor-phase epitaxyKOHASHI, Yoshinori; SATO, Takuya; IKEJIRI, Keitaro et al.Journal of crystal growth. 2012, Vol 338, Num 1, pp 47-51, issn 0022-0248, 5 p.Article

Fabrication and characterization of GaAs two-dimensional air-hole arrays on GaAs (111)A substrates using selective-area MOVPETAKEDA, Junichiro; INARI, Masaru; MOTOHISA, Junichi et al.Journal of crystal growth. 2004, Vol 272, Num 1-4, pp 570-575, issn 0022-0248, 6 p.Conference Paper

InGaAs nano-pillar array formation on partially masked InP(111)B by selective area metal-organic vapour phase epitaxial growth for two-dimensional photonic crystal applicationAKABORI, Masashi; TAKEDA, Junichiro; MOTOHISA, Junichi et al.Nanotechnology (Bristol. Print). 2003, Vol 14, Num 10, pp 1071-1074, issn 0957-4484, 4 p.Article

Fabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowiresHAYASHIDA, Atsushi; SATO, Takuya; HARA, Shinjiro et al.Journal of crystal growth. 2010, Vol 312, Num 24, pp 3592-3598, issn 0022-0248, 7 p.Article

Micro-photoluminescence spectroscopy study of high-quality InP nanowires grown by selective-area metalorganic vapor phase epitaxyKOBAYASHI, Yasunori; FUKUI, Masayasu; MOTOHISA, Junichi et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 6, pp 2204-2206, issn 1386-9477, 3 p.Conference Paper

Analysis of twin defects in GaAs nanowires and tetrahedra and their correlation to GaAs(1 11)B surface reconstructions in selective-area metal organic vapour-phase epitaxyYOSHIDA, Hiroatsu; IKEJIRI, Keitaro; SATO, Takuya et al.Journal of crystal growth. 2009, Vol 312, Num 1, pp 52-57, issn 0022-0248, 6 p.Article

Incorporation mechanism of Si during delta-doping in GaAs singular and vicinal surfacesMOTOHISA, Junichi; TAZAKI, Chiharu; AKABORI, Masashi et al.Journal of crystal growth. 2000, Vol 221, pp 47-52, issn 0022-0248Conference Paper

Position and number control of self-assembled InAs quantum dots by selective area metalorganic vapor-phase epitaxyCHEOL KOO HAHN; MOTOHISA, Junichi; FUKUI, Takashi et al.Journal of crystal growth. 2000, Vol 221, pp 599-604, issn 0022-0248Conference Paper

Spectral diffusion of type-II excitons in InP/InAs/InP core-multishell nanowiresMASUMOTO, Yasuaki; GOTO, Ken; PAL, Bipul et al.Physica. E, low-dimentional systems and nanostructures. 2010, Vol 42, Num 10, pp 2579-2582, issn 1386-9477, 4 p.Conference Paper

Bimolecular interlayer scattering of electrons in InP/InAs/InP core―multishell nanowiresMASUMOTO, Yasuaki; GOTO, Ken; TOMIMOTO, Shinichi et al.Journal of luminescence. 2013, Vol 133, Num 1, pp 135-137, issn 0022-2313, 3 p.Conference Paper

Ab initio-based approach to the reconstruction on InAs(111)A wetting layer grown on GaAs substrateISHIMURE, Naoki; AKIYAMA, Toru; NAKAMURA, Kohji et al.Physica. E, low-dimentional systems and nanostructures. 2010, Vol 42, Num 10, pp 2731-2734, issn 1386-9477, 4 p.Conference Paper